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Pulsed Laser Deposition Workstation

Brief description of equipment

Pulsed Laser Deposition System – PLD for deposition of oxide materials thin films and multilayers

  • excimer laser KrF 248 nm
  • Four 2″ targets with permanent rotation and 5 axis PC controlled motion
  • substrate temperature: ≤ 1000°C
  • high vacuum 10-7 mbar
  • high-pressure RHEED system for in-situ characterization included

The Reflection High Energy Electron Diffraction –RHEED is a technique that can be used during the thin film growth to characterize the surface of crystalline materials and to monitor the deposition of each atomic layer.

Contact person(s)
Adrian Crisan

National Institute for Materials Physics Bucharest, Romania

Related publications

Nanoengineered pinning centres in YBCO superconducting films, A. Crisan, V.S. Dang, P. Mikheenko; Physica C: Superconductivity and its applications 533 (2017) 118–132. DOI: 10.1016/j.physc.2016.06.011.



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